Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots
Identifieur interne : 00C013 ( Main/Repository ); précédent : 00C012; suivant : 00C014Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots
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Abstract
Photoluminescence (PL) of self-organized quantum dots (QDs) in bilayer InAs/GaAs structures is studied with a fixed seed layer and spacer, but variable second-layer coverage. Careful line shape analysis reveals modulation in the high-energy tail of the seed-layer PL spectrum. The oscillation-like behavior is reproducible with variations in both the temperature and optical excitation energy. These oscillations are attributed to carrier relaxation through inelastic phonon scattering from the wetting layer to the QD excited states. © 2003 American Institute of Physics.
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Mazur</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Albert-Einstein-Strasse 11, D-12489 Berlin, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Albert-Einstein-Strasse 11, D-12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Wang, Z M" uniqKey="Wang Z">Z. M. Wang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Xiao, Min" uniqKey="Xiao M">Min Xiao</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Tarasov, G G" uniqKey="Tarasov G">G. G. Tarasov</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Zhuchenko, Z Ya" uniqKey="Zhuchenko Z">Z. Ya. Zhuchenko</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Masselink, W T" uniqKey="Masselink W">W. T. Masselink</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Kissel, H" uniqKey="Kissel H">H. Kissel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0352882</idno><date when="2003-09-01">2003-09-01</date><idno type="stanalyst">PASCAL 03-0352882 AIP</idno><idno type="RBID">Pascal:03-0352882</idno><idno type="wicri:Area/Main/Corpus">00CC54</idno><idno type="wicri:Area/Main/Repository">00C013</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron-phonon interactions</term><term>Excited states</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Line widths</term><term>Photoluminescence</term><term>Self-assembly</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7867H</term><term>7855C</term><term>6865H</term><term>6322</term><term>7321L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Photoluminescence</term><term>Autoassemblage</term><term>Largeur raie</term><term>Interaction électron phonon</term><term>Etat excité</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Photoluminescence (PL) of self-organized quantum dots (QDs) in bilayer InAs/GaAs structures is studied with a fixed seed layer and spacer, but variable second-layer coverage. Careful line shape analysis reveals modulation in the high-energy tail of the seed-layer PL spectrum. The oscillation-like behavior is reproducible with variations in both the temperature and optical excitation energy. These oscillations are attributed to carrier relaxation through inelastic phonon scattering from the wetting layer to the QD excited states. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>MAZUR (Yu. I.)</s1></fA11><fA11 i1="02" i2="1"><s1>WANG (Z. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>SALAMO (G. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>XIAO (Min)</s1></fA11><fA11 i1="05" i2="1"><s1>TARASOV (G. G.)</s1></fA11><fA11 i1="06" i2="1"><s1>ZHUCHENKO (Z. Ya.)</s1></fA11><fA11 i1="07" i2="1"><s1>MASSELINK (W. T.)</s1></fA11><fA11 i1="08" i2="1"><s1>KISSEL (H.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Albert-Einstein-Strasse 11, D-12489 Berlin, Germany</s1></fA14><fA20><s1>1866-1868</s1></fA20><fA21><s1>2003-09-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. 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